Chemical kinetics simulation of deposition and sp2/sp3 bond ratio of diamond-like carbon film in plasma |
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| Authors: | Babak Shokri S Yaghmaee Maziar Abdollah Sarani Ali Reza Niknam |
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| Affiliation: | 1. Guangdong Institute of New Materials, National Engineering Laboratory for Modern Materials Surface Engineering Technology, The Key Lab of Guangdong for Modern Surface Engineering Technology, Guangzhou 510651, China;2. Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China;1. Crystal Growth Centre, Anna University, Chennai, India;2. Manonmaniam Sundaranar University, Tirunelveli, India;3. Inter-University Accelerator Centre, New Delhi, India |
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| Abstract: | In this work a theoretical model for the simulation of diamond-like carbon (DLC) film deposition in thermal plasma will be investigated. A chemical kinetics model for the most important molecular processes occurring in the gas-phase and gas-surface will be presented. This investigation is focused on the molecular processes in the gas and the elementary interactions of activated gas species with the deposited surface. The model quantitatively predicts the kinetics concentration of important plasma activated species. Also the net rate of the production of gas, surface, and bulk phase species will be calculated. Finally the growth rate of DLC film and the sp2/sp3 growth ratio under different reactor conditions (temperature, gas flow rate and reactor pressure) will be calculated and verified with literature data. |
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