Quantum size effects and transport phenomena in thin Bi layers |
| |
Authors: | EI Rogacheva SG Lyubchenko ON Nashchekina AV Meriuts MS Dresselhaus |
| |
Affiliation: | 1. Department of Theoretical and Experimental Physics, National Technical University, “Kharkov Polytechnic Institute”, Kharkov 61002, Ukraine;2. Department of Electrical Engineering and Computer Science, MIT, Cambridge, MA 02139, USA;3. Department of Physics, MIT, Cambridge, MA 02139, USA |
| |
Abstract: | For thin Bi films with thicknesses d=10–60 nm the dependences of the Hall coefficient, Seebeck coefficient, electrical conductivity, and Hall carrier mobility on d have been obtained at room temperature. Distinct oscillations of the transport properties with period Δd=(5±1) nm have been observed in the thickness range d=25–60 nm and attributed to quantization of the energy spectrum of holes. It has been suggested that a deep minimum observed in the thickness dependences of the kinetic coefficients at d~25 nm is connected with the manifestation of the electronic spectrum quantization and/or manifestation of a semimetal–semiconductor transition. The experimental data are in good agreement with the results of theoretical calculations. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |
|