| 等离子淋浴在离子注入工艺中的应用 |
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| 引用本文： | 彭立波,易文杰,刘仁杰.等离子淋浴在离子注入工艺中的应用[J].微纳电子技术,2006,43(9):447-450. |
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| 作者姓名： | 彭立波 易文杰 刘仁杰 |
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| 作者单位： | 北京中科信电子装备有限公司,北京,100036 |
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| 摘 要： | 阐述了等离子淋浴技术的工作原理和特点。介绍了在离子注入工艺中采用等离子淋浴来中和晶片表面的电荷积累,可将晶片表面的电荷积累电压控制在安全范围;应用等离子淋浴实现低能离子束的电中性传输,可提高低能离子束的传输效率和束通道的最大传输束流。最后介绍了国外在这两方面的研究应用情况。
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| 关 键 词： | 离子注入 等离子淋浴 电荷中和 传输效率 |
| 文章编号： | 1671-4776(2006)09-0447-04 |
| 收稿时间： | 2006-04-13 |
| 修稿时间： | 2006年4月13日 |
Application of Plasma Flood in Ion Implantation |
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| PENG Li-bo,YI Wen-jie,LIU Ren-jie.Application of Plasma Flood in Ion Implantation[J].Micronanoelectronic Technology,2006,43(9):447-450. |
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| Authors: | PENG Li-bo YI Wen-jie LIU Ren-jie |
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| Affiliation: | Beijing Zhongkexin Electronics Equipment Co., Ltd, Beijing 100036, China |
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| Abstract: | The principle and characteristic of plasma flood technique were discussed. The wafer charging voltage can be controlled in the safe range during ion implantation by the application of plasma flood and wafer charge accumulation. The low energy ion beam transportation in charge neutralization was realized by plasma flood. The transport efficiency and the maximum beam current of beam channel can be increased. The application abroad about these were introduced. |
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| Keywords: | ion implantation plasma flood charge neutralization transport efficiency |
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