PVD薄膜生长过程的计算机模拟

运用KMC方法对金属Ti膜的生长过程进行了计算机模拟,在合理选用势函数和相关参数的基础上,全面考虑了表面上所有不稳定团簇粒子发生扩散迁移运动的可能性。在对粒子团簇进行统计分析时,提出根据粒子的不同颜色对粒子团簇进行统计的新方法。模拟结果表明,随基底温度的升高,团簇总数呈现下降趋势,最大团簇尺寸在温度高于350K时,有明显的长大。而沉积速率的变化对粒子团簇的分布和团簇尺寸的影响不大。

Computer Simulation of Film Growth during Physical Vapor Deposition Process

The thin film growth process of titanium on substrate surface is simulated by kinetic Monte Carlo (KMC) method. A set of sound arithmetic is introduced by choosing proper potential function and physical parameter, which takes into account the diffusion probabilities of active particles of all instability clusters on the surface. A new statistical method, which could count the particle amount of a certain cluster by different color value is proposed. The simulation result shows that the sum of clusters dropped and the size of the largest cluster tended to grow up as temperature higher than 350K, and different deposition velocity has little effect on distribution and size of clusters.