基于结终端扩展的4H-SiC肖特基势垒二极管研制

采用高真空电子束热蒸发金属Ni分别作肖特基接触和欧姆接触,离子注入形成结终端扩展表面保护,研制出Ni/4H-SiC肖特基势垒二极管(SBD)。I-V特性测量说明,Ni/4H-SiCSBD有较好的整流特性,热电子发射是其主要的运输机理。实验测量其反向击穿电压达1800V,且反向恢复特性为32ns。

Development of Ni Schottky Barrier Diodes on 4H-Silicon Carbide Based on JTE

By using the electron beam evaporation to deposit metal Ni to form the Schottky contact and ohmic contact respectively in high vacuum ambient,Ni/4H-SiC Schottky Barrier Diodes were made in structures containing two-JTE by using B+ implantation. Measurents of the I-V characteristics of these diodes show the devices have good rectifying property and thermionic emission current is the dominant conduction mechanism for these Schottky contacts.The reverse breakdown-voltage for Ni/4H-SiC Schottky diodes have been found to be 1800V, and the reverse recovery characteristics of it is just 32 ns.