Mechanical bending of flexible complementary inverters based on organic and oxide thin film transistors |
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Authors: | DI Kim BU Hwang JS Park HS Jeon BS Bae HJ Lee N-E Lee |
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Affiliation: | 1. School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Kyunggi-do 440-746, Republic of Korea;2. SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon, Kyunggi-do 440-746, Republic of Korea;3. Department of Semiconductor and Display Engineering, Hoseo University, Asan 336-795, Republic of Korea |
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Abstract: | Flexible complementary inverters composed of p-channel pentacene thin-film transistors (TFTs) and n-channel amorphous indium gallium zinc oxide TFTs were fabricated on polymer substrates. The characteristics of the TFTs and inverters were evaluated at different bending radii. Throughout the bending experiments, the relationship between the performances of the inverters and the characteristics of the TFTs under mechanical deformation was analyzed. The mechanically applied strain led to a change in the voltage transfer characteristics of the complementary inverters, as well as the source–drain saturation current, field-effect mobility and threshold voltage of the TFTs. The switching threshold voltage of the fabricated inverters decreased with decreasing bending radius, which was related to changes in the field-effect mobility and the threshold voltage of the TFTs. |
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Keywords: | Flexible circuits Complementary inverters Thin film transistors Hybrid structure Pentacene |
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