Non-conventional metallic electrodes for organic field-effect transistors |
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Authors: | F. Golmar M. Gobbi R. Llopis P. Stoliar F. Casanova L.E. Hueso |
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Affiliation: | 1. CIC NanoGUNE Consolider, Tolosa Hiribidea 76, 20018 Donostia–San Sebastian, Basque Country, Spain;2. I.N.T.I. – CONICET, Av. Gral. Paz 5445 Ed. 42, B1650JKA, San Martín, Bs As, Argentina;3. Laboratoire de Physique des Solides, CNRS UPS, Bât 510, 91405 Orsay, France;4. ECyT, UNSAM, Martín de Irigoyen 3100, B1650JKA, San Martín, Bs As, Argentina;5. IKERBASQUE, Basque Foundation for Science, 48011 Bilbao, Basque Country, Spain |
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Abstract: | We study micrometer-sized organic field-effect transistors with either Pd or NiFe metallic electrodes. Neither of these materials is commonly used in organic electronics applications, but they could prove to be particularly advantageous in certain niche applications such as organic spintronics. Using organic semiconductors with different carrier transport characteristics as active layer, namely n-type C60 fullerene and p-type Pentacene, we prove that Pd (NiFe) is a very suitable electrode for p- (n-) type semiconductors. In particular, we characterized devices with channel lengths in the order of the micrometer, a distance which has allowed us to evaluate the electronic behavior in a regime where the interfacial problems become predominant and it is possible to reach elevated longitudinal electric fields. Our experimental results agree well with a simple model based on rigid energy levels. |
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Keywords: | Organic thin film transistors Organic field-effect transistors Non-conventional metallic electrodes Organic electronics Fullerene Pentacene |
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