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Dielectric properties and defect mechanisms of (1- |
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| Authors: | Saisai Liu Xiaojun Sun Biaolin Peng Hongbo Su Zaoming Mei Yanmin Huang Jianming Deng Congxue Su Liang Fang Laijun Liu |
| Affiliation: | 1.Guangxi Ministry-Province Jointly-Constructed Cultivation Base for State Key Laboratory of Processing for Non-ferrous Metal and Featured Materials,Guangxi Universities Key Laboratory of Non-ferrous Metal Oxide Electronic Functional Materials and Devices,Guilin,People’s Republic of China;2.Guangxi Key Laboratory of Building New Energy and Energy Conservation,Guilin University of Technology,Guilin,People’s Republic of China;3.School of Physical Science & Technology and Guangxi Key Laboratory for Relativistic Astrophysics,Guangxi University,Nanning,China;4.Henan Province Product Quality Supervision and Inspection Center,Zhengzhou,China;5.Henan LiHeng Building Materials Co., Ltd.,Zhengzhou,China |
| Abstract: | (1-x)Ba(Fe0.5Nb0.5)O3 -xBiYbO3 (BFN-xBY) ceramics were prepared by a conventional solid-state reaction method. The dielectric properties and relaxation behavior of BFN-xBY ceramics were analyzed according to dielectric and impedance spectroscopy. Dielectric permittivity of the ceramics increases with increasing temperature below 500 K then remains unchanged up to 700 K, while corresponding loss factor decreases with the increase of temperature below 500 K then increase slowly. Defect compensation mechanism of this system was analyzed in detail. The giant dielectric behavior of the ceramics arises from the internal barrier layer capacitor (IBLC) effect. Polarization effect at insulating grain boundaries between semiconducting grains accompanied by a strong Maxwell-Wagner (MW) relaxation mode. The characteristic of grain boundaries was revealed using impedance spectroscope and the universal dielectric response law. |
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