| 微小孔阵列垂直腔面发射激光器的研究 |
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| 引用本文： | 高建霞,宋国峰.微小孔阵列垂直腔面发射激光器的研究[J].激光与光电子学进展,2010(5). |
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| 作者姓名： | 高建霞 宋国峰 |
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| 作者单位： | 河北理工大学信息学院;中国科学院半导体研究所纳米光电子实验室; |
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| 摘 要： | 在980nm波长的大功率垂直腔面发射激光器(VCSEL)的基础上制备了高输出功率的微小孔阵列半导体激光器,其最大输出光功率达到了1mW。介绍了针对微小孔阵垂直腔面发射激光器的特殊制备工艺,并对其特性进行了分析。
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| 关 键 词： | 激光器 近场光学 垂直腔面激光器 输出光功率 时域有限差分法 |
Study of Subwavelength Hole Array Vertical-Cavity Surface-Emitting Laser |
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| Gao Jianxia Song Guofeng College of Information Hebei Polytechnic University,Tangshan,Hebei ,China Nano-Optoelectronics Laboratory.Study of Subwavelength Hole Array Vertical-Cavity Surface-Emitting Laser[J].Laser & Optoelectronics Progress,2010(5). |
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| Authors: | Gao Jianxia Song Guofeng College of Information Hebei Polytechnic University Tangshan Hebei China Nano-Optoelectronics Laboratory |
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| Affiliation: | Gao Jianxia1 Song Guofeng2 1College of Information Hebei Polytechnic University,Tangshan,Hebei 063009,China 2Nano-Optoelectronics Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
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| Abstract: | Subwavelength hole array vertical-cavity surface-emitting laser (VCSEL) is fabricated based on high power 980 nm VCSEL. The far-field output power reaches 1 mW. The special fabrication process is introduced and the characteristic of the device is also analyzed. |
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| Keywords: | laser near-field optics vertical-cavity surface-emitting laser output power finite difference time domain |
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