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Solid electrolyte of tantalum oxide thin film deposited by reactive DC and RF magnetron sputtering for all-solid-state switchable mirror glass
Authors:Kazuki Tajima   Yasusei Yamada   Shanhu Bao   Masahisa Okada  Kazuki Yoshimura
Affiliation:aMaterial Research Institute for Sustainable Development, National Institute of Advanced Industrial Science and Technology (AIST), Shimo-Shidami, Moriyama-ku, Nagoya 463-8560, Japan
Abstract:All-solid-state switchable mirror glass was prepared by magnetron sputtering. The device exhibited the multi-layer structure of Mg4Ni/Pd/Ta2O5 on WO3/ITO/glass substrate. The Mg4Ni, Pd, and Ta2O5 in the device acted as optical switches, proton injector and solid electrolyte, respectively. Reactive DC magnetron sputtering was employed as a new deposition method for Ta2O5 electrolyte thin film for the device. The transmittance of the device, at a wavelength of 670 nm using reactive DC-sputtered Ta2O5 thin film, reached 0.1% (a reflective state) to 48% (a transparent state). The transmittance change occurred in less than 40 s when 5 V was applied, and the switching speed was 60 times faster than that of the device using reactive RF-sputtered Ta2O5 thin film.
Keywords:Electrochromism   Tantalum oxide   Solid-state device   Switchable mirror   Sputtering
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