0.1μm SOI槽栅pMOS器件特性

制造了栅长0.1μm,栅氧厚度5.6nm,栅槽180nm的SOI槽栅pMOSFET.给出了器件的转移特性和输出特性.在Vds=-1.5V时,其饱和漏电流为380μA,关态泄漏电流为1.9nA;在Vds=-0.1V下的亚阈值斜率为115mV/dec,DIBL因子为70.7mV/V.实验结果表明,0.1μm SOI槽栅pMOSFET比同尺寸体硅槽栅pMOSFET拥有更好的电流驱动能力和亚阈值特性.

Characteristics of a 0.1μm SOI Grooved Gate pMOSFET

A 0.1μm SOI grooved gate pMOSFET with 5.6nm gate oxide is fabricated and demonstrated. The groove depth is 180nm. The transfer characteristics and the output characteristics are shown. At Vds = -1.5V, the drain saturation current is 380μA and the off-state leakage current is 1.9nA;the sub-threshold slope is 11mV/dec at Vds =-0. 1V and DIBL factor is 70. 7mV/V. The electrical characteristic comparison between the 0. 1μm SOI groovedgate pMOSFET and the 0. 1μm bulk grooved gate one with the same process demonstrates that a 0. 1μm SOI grooved gate pMOSFET has better characteristics in current-driving capability and sub-threshold slope.