采用半背沟注入提高部分耗尽SOI nMOSFETs的漏源击穿电压

制备了采用半背沟注入的浮体和体接触部分耗尽SOI nMOSFETs.测试结果表明这样的器件相对于传统的部分耗尽SOI nMOSFETs来说,在提高击穿电压和延缓翘曲现象发生方面有良好的表现,并且背栅阈值电压没有太大的变化.数值模拟表明降低的电场有助于击穿特性的提高和翘曲现象的延缓.详细分析了提高击穿特性和延缓翘曲效应的原因.

Improved Breakdown Voltage of Partially Depleted SOI nMOSFETs with Half-Back-Channel Implantation

FB (floating-body) and BC (body-contact) partially depleted SOI nMOSFETs with HBC(half-back-channel) implantation are fabricated.Test results show that such devices have good performance in delaying the occurrence of the "kink" phenomenon and improving the breakdown voltage as compared to conventional PDSOI nMOSFETs,while not decreasing the threshold voltage of the back gate obviously.Numerical simulation shows that a reduced electrical field in the drain contributes to the improvement of the breakdown voltage and a delay of the "kink"effect.A detailed analysis is given for the cause of such improvement of breakdown voltage and the delay of the"kink" effect.