| 薄起始层的VHF PECVD底栅微晶硅薄膜晶体管 |
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| 引用本文： | 李娟,赵淑云,刘建平,吴春亚,张晓丹,孟志国,赵颖,熊绍珍,张丽珠,张震.薄起始层的VHF PECVD底栅微晶硅薄膜晶体管[J].半导体学报,2005,26(6). |
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| 作者姓名： | 李娟 赵淑云 刘建平 吴春亚 张晓丹 孟志国 赵颖 熊绍珍 张丽珠 张震 |
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| 作者单位： | 南开大学光电子研究所,天津市光电子薄膜器件与技术重点实验室,天津,300071;天津机电职业技术学院,天津,300131;庆熙大学信息显示系,先进显示研究中心,汉城,130-701,韩国 |
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| 基金项目： | 国家自然科学基金，国家高技术研究发展计划(863计划)，天津市自然科学基金 |
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| 摘 要： | 对微晶硅薄膜晶体管,尤其对底栅型晶体管,在衬底和晶化层间存在一层非晶相起始层,这将严重影响器件性能.文中采用降低硅烷浓度的方法简便有效地减薄了用超高频化学气相法直接沉积的微晶硅薄膜起始层的厚度,得到起始层厚度小于20nm的微晶硅薄膜.在硅烷浓度为2%的条件下采用四版工艺制备了具有Al/SiNx/μc-Si/n+-μc-Si/Al结构的底栅微晶硅TFT,其开关比(Ion/Ioff)达到106,场效应迁移率为0.7cm2/(V·s),阈值电压为5V左右.
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| 关 键 词： | 微晶硅 起始层 硅烷浓度 底栅薄膜晶体管 |
A VHF PECVD Micro-Crystalline Silicon Bottom Gate TFT with a Thin Incubation Layer |
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| Li Juan,ZHAO Shuyun,Liu Jianping,Wu Chunya,Zhang Xiaodan,Meng Zhiguo,Zhao Ying,Xiong Shaozhen,Zhang Lizhu,Jang Jin.A VHF PECVD Micro-Crystalline Silicon Bottom Gate TFT with a Thin Incubation Layer[J].Chinese Journal of Semiconductors,2005,26(6). |
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| Authors: | Li Juan ZHAO Shuyun Liu Jianping Wu Chunya Zhang Xiaodan Meng Zhiguo Zhao Ying Xiong Shaozhen Zhang Lizhu Jang Jin |
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| Abstract: | The incubation layer with amorphous structure between the substrate and crystalline layer may obviously affect the performance for a microcrystalline Si thin film transistor (μc-Si TFT) ,especially for the bottom gate TFT (BG-TFT). It is found that decreasing the ratio of SiH4/(H2 +SiH4) is an effective way to decrease the incubation layer thickness of μc-Si directly deposited by VHF PECVD without any further thermal or laser treatment. Based on the μc-Si with a thin incubation layer, the BG-TFT with Al/SiNx/μc-Si/n+ -μc-Si/Al structure is fabricated. The ravoltage is about 5V. |
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| Keywords: | microcrystalline silicon incubation layer silicon concentration bottom gate μc-Si TFT |
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