矩形缺陷轮廓的成品率模型 |
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引用本文: | 王俊平,郝跃. 矩形缺陷轮廓的成品率模型[J]. 半导体学报, 2005, 26(8): 1514-1518 |
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作者姓名: | 王俊平 郝跃 |
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作者单位: | 西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安,710071;西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安,710071 |
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基金项目: | 国家高技术研究发展计划(863计划) |
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摘 要: | 现有成品率及关键面积估计模型中,假定缺陷轮廓为圆,而实际缺陷轮廓为非规则形状.本文提出了矩形缺陷轮廓的成品率模型,该模型与圆模型相比,考虑了缺陷的二维分布特性,接近真实缺陷形状及IC版图布线和成品率估计的特点.比较了新模型与真实缺陷及其圆模型引起的成品率损失,表明新模型在成品率估计方面更加精确,这对成品率精确估计与提高有重要意义.
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关 键 词: | 真实缺陷 矩形缺陷模型 关键面积 成品率模型 |
Yield Modeling of Rectangular Defect Outline |
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Abstract: | In integrated circuits,the defects associated with photolithography are assumed to be in the shape of circular discs in order to perform the estimation of yield and fault analysis. However, real defects exhibit a great variety of shapes. In this paper,a novel yield model is presented and the critical area model of short circuit is correspondingly provided. In comparison with the circular model corrently available, the new model takes the similarity shape to an original defect, the two-dimensional distributional characteristic of defects, the feature of a layout routing and the character of yield estimation into account. As for the aspect of prediction of yield,the experimental results show that the new model may predict the yield caused by real defects more accurately than the circular model does. It is significant that the yield is accurately estimated and improved using the proposed model. |
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Keywords: | real defect rectangular defect model critical area yield modeling |
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