| GaN和p型GaN薄膜中声子模和缺陷模的变温喇曼散射 |
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| 引用本文： | 王瑞敏,陈光德,LIN J Y,Jang H X. GaN和p型GaN薄膜中声子模和缺陷模的变温喇曼散射[J]. 半导体学报, 2005, 26(4) |
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| 作者姓名： | 王瑞敏 陈光德 LIN J Y Jang H X |
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| 作者单位： | 西安交通大学理学院,西安,710049;Department of Physics, Kansas State University, KS 60502,USA |
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| 摘 要： | 研究了MOCVD生长的GaN及掺Mg GaN薄膜从78到578K下的喇曼散射谱.在GaN和掺Mg GaN的谱中都观察到一个位于247cm-1的峰,此峰被认为是缺陷诱导的散射峰,而非电子散射和Mg的局域模.同时讨论了两个谱中E2和A1(LO)声子峰的频率和线形.在掺Mg GaN样品中观察到应力松弛现象.
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| 关 键 词： | GaN p型GaN 喇曼散射 缺陷模 |
Temperature-Dependent Raman Scattering of Phonon Modes and Defect Modes in GaN and p-Type GaN Films |
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| WANG Ruimin,Chen Guangde,LIN J Y,Jang H X. Temperature-Dependent Raman Scattering of Phonon Modes and Defect Modes in GaN and p-Type GaN Films[J]. Chinese Journal of Semiconductors, 2005, 26(4) |
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| Authors: | WANG Ruimin Chen Guangde LIN J Y Jang H X |
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| Abstract: | Raman spectra of undoped GaN and Mg-doped GaN films grown by metal-organic chemical-vapor deposition on sapphire are investigated between 78 and 573K. A peak at 247cm-1 is observed in both Raman spectra of GaN and Mg-doped GaN. It is suggested that the defect-induced scattering is origin of the mode. The electronic Raman scattering mechanism and Mg-related local vibrational mode are excluded. Furthermore, the differences of E2 and A1 (LO) modes in two samples are also discussed. The stress relaxation is observed in Mg-doped GaN. |
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| Keywords: | GaN p-type GaN Raman scattering defect modes |
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