| 单片GaAs 3bit相位DAC的设计与实现 |
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| 引用本文： | 张有涛,夏冠群,李拂晓,高建峰,杨乃彬.单片GaAs 3bit相位DAC的设计与实现[J].半导体学报,2005,26(5). |
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| 作者姓名： | 张有涛 夏冠群 李拂晓 高建峰 杨乃彬 |
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| 作者单位： | 中国科学院上海微系统与信息技术研究所,上海,200050;南京电子器件研究所,南京,210016;中国科学院上海微系统与信息技术研究所,上海,200050;南京电子器件研究所,南京,210016 |
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| 摘 要： | 详细论述了用于数字射频存储器系统的单片超高速GaAs 3bit相位DAC的设计、制造及测试.在南京电子器件研究所标准75mm GaAs工艺线采用0.5μm全离子注入MESFET工艺完成流片.芯片输入输出阻抗实现在片50Ω匹配.测试结果表明,其工作带宽大于1.5GHz,相位精度小于4%,电路的码流翻转速率大于12Gbps.
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| 关 键 词： | 相位数字化DAC 超高速 GaAs DRFM |
Design and Realization of a Monolithic GaAs 3Bit Phase Digitizing DAC |
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| Zhang Youtao,Xia Guanqun,Li Fuxiao,GAO Jianfeng,Yang Naibin.Design and Realization of a Monolithic GaAs 3Bit Phase Digitizing DAC[J].Chinese Journal of Semiconductors,2005,26(5). |
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| Authors: | Zhang Youtao Xia Guanqun Li Fuxiao GAO Jianfeng Yang Naibin |
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| Abstract: | Design,realization, and test of a monolithic GaAs 3bit phase digitizing DAC for 3bit digital radio-frequency memory are detailedly described. The 0. 5μm fully ion-implanted GaAs MESFET is used to fabricate the circuit in Nanjing Electronic Devices Institute's (NEDI' s) 75mm standard process line. The high-speed DAC is designed with on-wafer 50Ω I/O impedance matching. Test results show that its work bandwidth is more than 1.5GHz,and phase accuracy is better than 4%. Its code conversion rate can be higher than 12Gbps. |
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| Keywords: | phase digitizing DAC high-speed GaAs DRFM |
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