| 薄虚拟SiGe衬底上的应变Si pMOSFETs |
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| 引用本文： | 李竞春,谭静,杨谟华,张静,徐婉静.薄虚拟SiGe衬底上的应变Si pMOSFETs[J].半导体学报,2005,26(5):881-885. |
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| 作者姓名： | 李竞春 谭静 杨谟华 张静 徐婉静 |
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| 作者单位： | 1. 电子科技大学微电子与固体电子学院,成都,610054
2. 模拟集成电路国家重点实验室,重庆,400060 |
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| 摘 要： | 成功地试制出薄虚拟SiGe衬底上的应变Si pMOSFETs.利用分子束外延技术在100nm低温Si(LT-Si)缓冲层上生长的弛豫虚拟Si0.8Ge0.2衬底可减薄至240nm.低温Si缓冲层用于释放虚拟SiGe衬底的应力,使其应变弛豫.X射线双晶衍射和原子力显微镜测试表明:虚拟SiGe衬底的应变弛豫度为85%,表面平均粗糙度仅为1.02nm.在室温下,应变Si pMOSFETs的最大迁移率达到140cm2/(V·s).器件性能略优于采用几微米厚虚拟SiGe衬底的器件.
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| 关 键 词： | 应变硅 锗硅虚衬底 p型场效应晶体管 |
Strained-Si pMOSFETs on Very Thin Virtual SiGe Substrates |
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| Li Jingchun,Tan Jing,YANG Mohua,Zhang Jing,Xu Wanjing.Strained-Si pMOSFETs on Very Thin Virtual SiGe Substrates[J].Chinese Journal of Semiconductors,2005,26(5):881-885. |
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| Authors: | Li Jingchun Tan Jing YANG Mohua Zhang Jing Xu Wanjing |
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| Affiliation: | University of Electronic Science and Technology;University of Electronic Science and Technology;University of Electronic Science and Technology |
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| Abstract: | Strained-Si pMOSFETs on very thin relaxed virtual SiGe substrates are presented. The 240nm relaxed virtual Si0. 8Ge0.2 layer on 100nm low-temperature Si(LT-Si) is grown on Si(100) substrates by molecular beam epitaxy. LT-Si buffer layer is used to release stress of the SiGe layer so as to make it relaxed. DCXRD, AFM, and TEM measurements indicate that the strain relaxed degree of SiGe layer is 85 % ,RMS roughness is 1.02nm,and threading dislocation density is at most 107 cm-2. At room temperature,a maximum hole mobility of strained-Si pMOSFET is al SiGe substrates. |
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| Keywords: | strained-Si virtual SiGe substrates pMOSFET |
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