| 锗对重掺硼直拉硅中氧沉淀的影响 |
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| 引用本文： | 江慧华,杨德仁,田达晰,马向阳,李立本,阙端麟. 锗对重掺硼直拉硅中氧沉淀的影响[J]. 半导体学报, 2005, 26(11): 2107-2110 |
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| 作者姓名： | 江慧华 杨德仁 田达晰 马向阳 李立本 阙端麟 |
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| 作者单位： | 浙江大学硅材料国家重点实验室,杭州,310027 |
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| 基金项目： | 中国科学院资助项目，国家科技攻关项目 |
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| 摘 要： | 通过单步长时间退火(650～1150℃/64h)和低高两步退火(650℃/16h+1000℃/16h和800℃/4～128h+1000℃/16h),研究锗对重掺硼硅(HB-Si)中氧沉淀的影响.实验结果表明,经过退火后,掺锗的重掺硼硅中与氧沉淀相关的体微缺陷密度要远远低于一般的重掺硼硅,这表明锗的掺人抑制了重掺硼硅中氧沉淀的生成,并对相关的机制做了初步探讨.
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| 关 键 词： | 重掺硼直拉硅 锗 氧沉淀 |
| 收稿时间： | 2015-08-19 |
Effects of Germanium on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon |
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| Jiang Huihua, Yang Deren, Tian Daxi, Ma Xiangyang, Li Liben, Que Duanlin. Effects of Germanium on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon[J]. Journal of Semiconductors, 2005, In Press. Jiang H H, Yang D R, Tian D X, Ma X Y, Li L B, Que D L. Effects of Germanium on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon[J]. Chin. J. Semicond., 2005, 26(11): 2107.Export: BibTex EndNote |
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| Authors: | Jiang Huihua Yang Deren Tian Daxi Ma Xiangyang Li Liben Que Duanlin |
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| Affiliation: | State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China;State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310028,China;State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310029,China;State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310030,China;State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310031,China;State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310032,China |
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| Abstract: | Oxygen precipitation in conventional heavily B-doped Czochralski (CZ) silicon (HB-Si) and heavily Ge-B codoped CZ silicon (Ge codoped HB-Si) subjected to single step annealing at 650～1150℃ for 64h or low-high two step annealing(650℃/16h＋1000℃/16h and 800℃/4～128h＋1000℃/16h) are comparatively investigated.It is found that the density of bulk microdefects (BMDs) in Ge codoped HB-Si is much lower than that in HB-Si.The mechanism of which is preliminarily discussed. |
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| Keywords: | heavily boron-doped Czochralski silicon germanium oxygen precipitation |
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