| 超高真空化学气相生长用于应变硅的高质量SiGe缓冲层 |
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| 引用本文： | 吴贵斌,叶志镇,刘国军,赵炳辉,崔继峰. 超高真空化学气相生长用于应变硅的高质量SiGe缓冲层[J]. 半导体学报, 2005, 26(11): 2139-2142 |
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| 作者姓名： | 吴贵斌 叶志镇 刘国军 赵炳辉 崔继峰 |
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| 作者单位： | 浙江大学硅材料国家重点实验室,杭州,310027 |
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| 基金项目： | 科技部攀登计划，浙江省资助项目 |
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| 摘 要： | 采用UHV/CVD技术,以多层SiGe/Si结构作为缓冲层来生长应变弛豫SiGe虚衬底,并在此基础上生长出了具有张应力的Si层.利用高分辨X射线、二次离子质谱仪和原子力显微镜分别对薄膜的晶体质量、厚度以及平整度进行了分析.结果表明,通过这种方法制备的SiGe虚衬底,不仅可以有效提高外延层中Ge含量,以达到器件设计需要,而且保证很好的晶体质量和平整的表面.Schimmel液腐蚀后观察到的位错密度只有1×106cm-2.
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| 关 键 词： | 超高真空化学气相沉积 锗硅 缓冲层 |
| 收稿时间： | 2015-08-19 |
UHV/CVD Grown Strain Relaxed SiGe Buffer Layers for Strained Silicon |
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| Wu Guibin, Ye Zhizhen, Liu Guojun, Zhao Binghui, Cui Jifeng. UHV/CVD Grown Strain Relaxed SiGe Buffer Layers for Strained Silicon[J]. Journal of Semiconductors, 2005, In Press. Wu G B, Ye Z Z, Liu G J, Zhao B H, Cui J F. UHV/CVD Grown Strain Relaxed SiGe Buffer Layers for Strained Silicon[J]. Chin. J. Semicond., 2005, 26(11): 2139.Export: BibTex EndNote |
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| Authors: | Wu Guibin Ye Zhizhen Liu Guojun Zhao Binghui Cui Jifeng |
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| Affiliation: | State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China;State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310028,China;State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310029,China;State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310030,China;State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310031,China |
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| Abstract: | Multi SiGe/Si layers with increasing Ge content are grown using ultra high vacuum chemical vapor deposition.Relaxation and Ge content are investigated with high resolution X-ray diffraction,SIMS,and AFM.By adopting this structure the Ge contents are remarkably improved,and a thin strain-relaxed SiGe buffer layer with high quality,low dislocation density,and smooth morphology is realized.The density of dislocations is calculated to be 1e6cm-2 through optical microscopy. |
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| Keywords: | UHV/CVD SiGe buffer layer |
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