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| 用高反射率型半导体可饱和吸收镜实现半导体端面泵浦Yb∶YAB激光器被动锁模 | |
| 引用本文： | 王勇刚,马骁宇,薛迎红,孙虹,张志刚,王清月. 用高反射率型半导体可饱和吸收镜实现半导体端面泵浦Yb∶YAB激光器被动锁模[J]. 半导体学报, 2005, 26(2) |
| 作者姓名： | 王勇刚 马骁宇 薛迎红 孙虹 张志刚 王清月 |
| 作者单位： | 1. 中国科学院半导体研究所,北京,100083;天津大学精密仪器与光电子工程学院,超快激光实验室,天津,300072 2. 中国科学院半导体研究所,北京,100083 3. 天津大学精密仪器与光电子工程学院,超快激光实验室,天津,300072 |
| 摘 要： | 利用金属有机气相淀积方法生长了一种新型吸收体:高反射率半导体可饱和吸收镜.用这种吸收体兼作端镜,实现了1.044μm半导体端面泵浦Yb∶YAB激光器被动锁模,脉冲宽度为3.05ps,重复率为375MHz,输出功率为45mW. |
| 关 键 词： | Yb∶YAB 高反射率 半导体饱和吸收镜 |
Passively Mode Locked Diode-End-Pumped Yb∶YAB Laser with High Reflectivity Type Semiconductor Saturable Absorption Mirror |
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| Wang Yonggang,Ma Xiaoyu,Xue Yinghong,Sun Hong,Zhang Zhigang,WANG Qingyue. Passively Mode Locked Diode-End-Pumped Yb∶YAB Laser with High Reflectivity Type Semiconductor Saturable Absorption Mirror[J]. Chinese Journal of Semiconductors, 2005, 26(2) | |
| Authors: | Wang Yonggang Ma Xiaoyu Xue Yinghong Sun Hong Zhang Zhigang WANG Qingyue |
| Abstract: | A novel high reflectivity type of semiconductor saturable absorption mirror grown by metal organic chemical vapor deposition is presented.Using the mirror as well as an end mirror,passively mode locked Yb∶YAB laser is realized,which produces a pulse as short as 3.05ps at 1.044μm.The pulse frequency is 375MHz;the output power is 45mW. |
| Keywords: | Yd∶YAB high reflectivity SESAM |
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