| CMOS低噪声放大器中噪声的系统研究方法 |
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| 引用本文： | 冯东,石秉学. CMOS低噪声放大器中噪声的系统研究方法[J]. 半导体学报, 2005, 26(3): 487-493 |
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| 作者姓名： | 冯东 石秉学 |
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| 作者单位： | 清华大学微电子学研究所,北京,100084;清华大学微电子学研究所,北京,100084 |
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| 摘 要： | 采用系统研究方法来分析包括MOS器件的沟道噪声和感应栅噪声在内的CMOS低噪声放大器中的噪声,并提出了一个新的噪声系数解析式.基于此解析式,讨论了分布栅电阻和内部沟道电阻对噪声性能的影响.对噪声性能进行了两种不同的优化,并应用于5.2GHz CMOS低噪声放大器的设计.
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| 关 键 词： | 放大器噪声 沟道噪声 沟道电阻 感应栅噪声 低噪声放大器 噪声优化 |
A Systematical Approach for Noise in CMOS LNA |
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| FENG Dong,Shi Bingxue. A Systematical Approach for Noise in CMOS LNA[J]. Chinese Journal of Semiconductors, 2005, 26(3): 487-493 |
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| Authors: | FENG Dong Shi Bingxue |
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| Abstract: | A systematic approach is used to analyze the noise in CMOS low noise amplifier(LNA),including channel noise and induced gate noise in MOS devices.A new analytical formula for noise figure is proposed.Based on this formula,the impacts of distributed gate resistance and intrinsic channel resistance on noise performance are discussed.Two kinds of noise optimization approaches are performed and applied to the design of a 52GHz CMOS LNA. |
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| Keywords: | amplifier noise channel noise channe resistance induced gate noise low noise amplifier noise optimization |
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