| 基于同一外延层结构的10Gb/s单片集成光发射模块 |
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| 引用本文： | 孙长征,熊兵,王健,蔡鹏飞,田建柏,罗毅,刘宇,谢亮,张家宝,祝宁华.基于同一外延层结构的10Gb/s单片集成光发射模块[J].半导体学报,2005,26(4). |
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| 作者姓名： | 孙长征 熊兵 王健 蔡鹏飞 田建柏 罗毅 刘宇 谢亮 张家宝 祝宁华 |
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| 作者单位： | 清华大学电子工程系集成光电子学联合国家重点实验室,北京,100084;中国科学院半导体研究所集成光电子学联合国家重点实验室,北京,100083 |
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| 基金项目： | 国家自然科学基金，国家高技术研究发展计划(863计划)，国家重点基础研究发展计划(973计划) |
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| 摘 要： | 利用同一外延层集成工艺方法制作了10Gb/s电吸收调制器/分布反馈(DFB)半导体激光器单片集成光发射模块.在器件中引入增益耦合机制以提高单模成品率,并采用感应耦合等离子体干法刻蚀技术以降低调制器电容.集成器件阈值电流为12mA,在-2V偏置时的消光比为15dB,器件的小信号调制带宽超过10GHz.在10Gb/s调制速率下经过35km单模光纤传输后,误码率为10-12时的功率代价小于1dB.
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| 关 键 词： | 分布反馈激光器 电吸收调制器 光子集成回路 增益耦合 |
10Gb/s EML Module Based on Identical Epitaxial Layer Scheme |
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| Sun Changzheng,Xiong Bing,Wang Jian,Cai Pengfei,Tian Jianbo,Luo Yi,Liu Yu,XIE Liang,ZHANG JIABAO,ZHU Ninghua.10Gb/s EML Module Based on Identical Epitaxial Layer Scheme[J].Chinese Journal of Semiconductors,2005,26(4). |
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| Authors: | Sun Changzheng Xiong Bing Wang Jian Cai Pengfei Tian Jianbo Luo Yi Liu Yu XIE Liang ZHANG JIABAO ZHU Ninghua |
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| Abstract: | A 10Gb/s transmitter module containing an electroabsorption modulator monolithically integrated with a distributed feedback (DFB) semiconductor laser is fabricated using the identical epitaxial layer scheme. Gain-coupling mechanism is employed to improve the single mode yield of the DFB laser, while inductively coupled plasma dry etching technique is utilized to reduce the modulator capacitance. The integrated device exhibits a threshold current as low as 12mA and an extinction ratio over 15dB at -2V bias. The small signal modulation bandwidth is measured to be over 10GHz. The transmission experiment at 10Gb/s indicates a power penalty less than 1dB at a bit-error-rate of 10-12 after transmission through 35km single mode fiber. |
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| Keywords: | DFB lasers EA modulators photonic integrated circuit gain-coupling |
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