1 Volt organic transistors with mixed self-assembled monolayer/Al2O3 gate dielectrics |
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| Affiliation: | 1. School of Chemistry, University of Manchester, Oxford Road, Manchester M13 9PL, UK;2. Cambridge Display Technology Ltd, Madingley Road, Cambridge CB3 0TX, UK;3. School of Electrical and Electronic Engineering, University of Manchester, Sackville Street, Manchester M13 9PL, UK;1. Department of Physics, College of Science, Tianjin University of Science & Technology, Tianjin 300457, China;2. Group of English, Gangguan Middle School of Tianjin, Tianjin 300301, China;3. Beijing Key Laboratory of Special Functional Materials and Films, School of Materials Science and Engineering, Beihang University, Beijing 100191, China;1. Institute of Solid State Physics, Graz University of Technology, Petersgasse 16, A-8010 Graz, Austria;2. MATERIALS-Institute for Surface Technologies and Photonics, Joanneum Research Forschungsgesellschaft mbH, Franz-Pichler-Straße 30, A-8160 Weiz, Austria;1. Department of Solid State Physics, University of Mazandaran, 4741695447 Babolsar, Iran;2. Faculty of Chemistry, University of Mazandaran, Babolsar, Iran;1. College of Physics and Lab of New Fiber Materials and Modern Textile, Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071, China;2. Electronic Ceramics Center, DongEui University, Busan 614-714, Korea |
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| Abstract: | Control of the threshold voltage and the subthreshold swing is critical for low voltage transistor operation. In this contribution, organic field-effect transistors (OFETs) operating at 1 V using ultra-thin (∼4 nm), self-assembled monolayer (SAM) modified aluminium oxide layers as the gate dielectric are demonstrated. A solution-processed donor–acceptor semiconducting polymer poly(3,6-di(2-thien-5-yl)-2,5-di(2-octyldodecyl)-pyrrolo3,4-c]pyrrole-1,4-dione)thieno3,2-b]thiophene) (PDPP2TTT) is used as the active layer. It is shown that the threshold voltage of the fabricated transistors can be simply tuned by carefully controlling the composition of the applied SAM. The optimised OFETs display threshold voltages around 0 V, low subthreshold slopes (150 ± 5 mV/dec), operate with negligible hysteresis and show average saturated field-effect mobilities in excess of 0.1 cm2/V s at 1 V. |
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| Keywords: | Organic-field-effect transistor (OFET) Low voltage operation Self-assembled monolayer (SAM) Polymer semiconductor |
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