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High-performance diketopyrrolopyrrole-based organic field-effect transistors for flexible gas sensors

Affiliation:	1. Department of Energy and Materials Engineering, Dongguk University, 30, Pil-dong-ro, 1-gil, Jung-gu, Seoul 100-715, Republic of Korea;2. Advanced Energy and Electronic Materials Research Center, Dongguk University, 30, Pil-dong-ro, 1-gil, Jung-gu, Seoul 100-715, Republic of Korea;3. Department of Polymer Engineering, Gyeongsang National University, 900, Gajwa-dong, Jinju, Gyeongnam 660-701 Republic of Korea;4. Department of Chemistry, Gyeongsang National University and Research Institute of Nature Science (RINS), 900, Gajwa-dong, Jinju, Gyeongnam 660-701, Republic of Korea;1. School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100, China;2. ARC Centre of Excellence in Exciton Science, School of Chemistry, The University of Melbourne, Parkville, Victoria 3010, Australia;1. Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, India;2. Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, India;3. Department of Chemistry, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, India;4. Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur 721302, West Bengal, India;1. College of Chemistry, Fuzhou University, Fuzhou, Fujian 350116, PR China;2. State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, PR China;3. School of Materials Science & Engineering, Tongji University, Shanghai, 201804, PR China

Abstract:	We demonstrate high-performance flexible polymer OFETs with P-29-DPP-SVS in various geometries. The mobilities of TG/BC OFETs are approximately 3.48 ± 0.93 cm²/V s on a glass substrate and 2.98 ± 0.19 cm²/V s on a PEN substrate. The flexible P-29-DPP-SVS OFETs exhibit excellent ambient and mechanical stabilities under a continuous bending stress of 1200 times at an R = 8.3 mm. In particular, the variation of μ_FET, V_Th and leakage current was very negligible (below 10%) after continuous bending stress. The BG/TC P-29-DPP-SVS OFETs on a PEN substrate applies to flexible NH₃ gas sensors. As the concentration of NH₃ increased, the channel resistance of P-29-DPP-SVS OFETs increased approximately 100 times from ∼10⁷ to ∼10⁹ Ω at V_SD = −5 V and V_GS = −5 V.

Keywords:	Organic field effect transistors Conjugated polymer Gas sensor Diketopyrrolopyrrole Flexible organic transistors
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