Colloidal quantum-dot LEDs with a solution-processed copper oxide (CuO) hole injection layer |
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| Affiliation: | 1. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072, China;2. Synergetic Innovation Center of Chemical Science and Engineering, Tianjin, China;3. Department of Electrical & Electronic Engineering, South University of Science and Technology of China, Tangchang Road 1088, Shenzhen, Guangdong 518055, China |
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| Abstract: | Solution-processed copper oxide (CuO) thin films are introduced as a hole injection layer (HIL) for quantum dot-based light-emitting diodes (QD-LEDs). AFM, XPS and UPS measurements are utilized for the characterization of the thermally-annealed CuO films. The optimized CuO-based QD-LEDs exhibited an external quantum efficiency (EQE) of 5.37% with a maximum brightness over 70,000 cd/m2. The key parameters including the current efficiency and power efficiency of CuO-based QD-LEDs are comparable to the commonly-used PEDOT:PSS-based QD-LEDs using the same structure, further demonstrating that CuO is an effective hole injection layer for QD-LED applications. |
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| Keywords: | Quantum dot Light-emitting diodes Electroluminescence Copper oxide Hole injection layer |
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