Influence of cathode roughness on the performance of F8BT based organic–inorganic light emitting diodes |
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| Affiliation: | 1. Department of Physics, Sharif University of Technology, Tehran 14588, Iran;2. Department of Physics, Faculty of Sciences, Arak University, Arak, Iran;3. Institute for Nanoscience and Nanotechnology, Sharif University of Technology, Tehran 14588, Iran;1. School of Engineering and Physical Sciences, James Cook University, Townsville 4811, Queensland, Australia;2. Institute of Materials Research and Engineering, A1STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602, Singapore;3. School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, GPO Box 2434, Brisbane, QLD 4001, Australia;4. Centre for Organic Photonics & Electronics (COPE), School of Chemistry and Molecular Biosciences and School of Mathematics and Physics, The University of Queensland, Brisbane 4072, Queensland, Australia;1. Photovoltaic and Optoelectronic Devices Group, Departament de Física, Universitat Jaume I, ES-12071 Castelló, Spain;2. EMAT, University of Antwerp, Antwerp, Belgium;3. Genes’Ink, 24 Avenue Gaston Imbert, 13790 Rousset, France;4. Department of Chemistry, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia;1. Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei Key Lab on Organic and Polymeric Optoelectronic Materials, Department of Chemistry, Wuhan University, Wuhan 430072, PR China;2. Beijing National Laboratory for Molecular Sciences (BNLMS), Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080, PR China;1. Université de Sousse, ISSAT de Sousse, Cité Ettafala, 4003 Ibn Khaldoun Sousse, Tunisia;2. Université de Monastir, LIMA, Faculté des Sciences de Monastir, 5019 Monastir, Tunisia;3. Analytical Laboratory, Department of Applied Organic Chemistry, National Research Centre, Cairo, Egypt;4. Université de Lyon, Lyon1, Institut des Sciences Analytiques (ISA), UMR 5280, 5 Rue de la Doua, 69100 Villeurbanne Cedex, France |
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| Abstract: | Hybrid light emitting diodes (HyLED) with a structure of FTO/ZnO/F8BT/MoO3/Au/Ag is fabricated and the influence of surface roughness of cathode (FTO/ZnO) is investigated. The roughness of FTO could be decreased from 9.2 nm to 2.2 nm using a mild polishing process. The ZnO film, deposited by spray pyrolysis, functions as an electron injection layer. The roughness of the FTO/ZnO surface is found also highly dependent on the ZnO thickness. For thin ZnO films (20 nm), polishing results in better efficacy and power efficiency of LED devices, with nearly a two times improvement. For thick ZnO films (210 nm), the overall FTO/ZnO roughness is almost independent of the FTO roughness, hence both polished and unpolished substrates exhibit identical performance. Increasing ZnO thickness generally improves the electron injection condition, leading to lower turn on voltage and higher current and power efficiencies. However, for too large ZnO thickness (210 nm) the ohmic loss across the film dominates and deteriorates the performance. While the polished substrates show less device sensitivity to ZnO thickness and better performance at thin ZnO layer, best performance is obtained for unpolished substrates with 110 nm ZnO thickness. Larger interface area of ZnO/F8BT and enhanced electric filed at sharp peaks/valleys could be the reason for better performance of devices with unpolished substrates. |
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| Keywords: | Hybrid light emitting diode (HyLED) Polish Surface roughness Interface Electron injection F8BT |
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