Light-induced electron spin resonance study of galvinoxyl-doped P3HT/PCBM bulk heterojunctions |
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| Affiliation: | 1. Research Institute, TOPnC Co., Ltd., Daejeon 305-719, Republic of Korea;2. PEMS Research Institute, Department of Creative Convergence Engineering, Hanbat National University, Daejeon 305-719, Republic of Korea;3. Industrial-University Cooperation Foundation, Hanbat National University, Daejeon 305-719, Republic of Korea;4. Energy Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 305-600, Republic of Korea;5. Division of Materials Science, Korea Basic Science Institute, Daejeon 305-806, Republic of Korea;6. Experimental Physics VI, Julius-Maximilians Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany;7. Department of Physics & RIPC, Chonbuk National University, Jeonju 561-756, Republic of Korea;1. Department of Physics, University of Peshawar, Peshawar, Pakistan;2. PCSIR Laboratories Complex, Peshawar, Pakistan;3. Department of Physics, Karakoram International University, Gilgit, Pakistan;1. Institute for Clean Energy & Advanced Materials, Southwest University, 2 Tiansheng Rd, Beibei, Chongqing 400715, China;2. Chongqing Key Laboratory for Advanced Materials & Technologies of Clean Electrical Power Sources, 2 Tiansheng Rd, Beibei, Chongqing 400715, China;3. Faculty of Materials and Energy, Southwest University, 2 Tiansheng Rd, Beibei, Chongqing 400715, China;1. School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, PR China;2. Department of Physics, Jining University, Qufu 273155, PR China;1. Department of Quantum Technologies, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland;2. Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland;1. Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha 410082, China;2. Department of Information Engineering, Gannan Medical University, Ganzhou, Jiangxi 341000, China;1. College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao, 266042, PR China;2. Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao, 266101, PR China;3. Department of Physics, Hamline University, St. Paul, 55104, USA |
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| Abstract: | We report the effects of doping of P3HT/PCBM layers with spin 1/2 radicals of galvinoxyl (Gx) based on light-induced electron spin resonance (LESR), photoluminescence-detected magnetic resonance (PLDMR), and post-annealing experiments.LESR showed both a P3HT+ and PCBM− signal for undoped P3HT/PCBM; however, as Gx doping increased (above ∼1 wt%), only the P3HT+ signal was evident in the LESR spectra, with no PCBM− signal.The PLDMR exhibited a strong narrow signal at g = 2.002 that originates from nongeminate polaron pairs; no triplet PLDMR signal has been observed throughout the whole range of Gx concentrations (x = 0, 0.1, 1, 2, 4, 12 wt%). Adding Gx to ∼3 wt% led to a decrease of the PL-enhancement.There was big difference between the slow-dried P3HT/PCBM samples and the post-annealed samples. For the slow-dried samples, efficiency monotonously decreased with Gx additives. When post-annealed, however, an enhancement in η was observed at ∼2 wt% for P3HT/PCBM(1:2) samples.The LESR spectra for post-annealed samples revealed disappearance of Gx spin signals, and thus no spin interactions with PCBM− spins. It is unlikely that the increase of efficiency after Gx doping of P3HT/PCBM solar cell is due to an increase of triplet states. |
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| Keywords: | P3HT/PCBM Bulk heterojunction Galvinoxyl ESR PLDMR Post-annealing |
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