Annealing and doping-dependent magnetoresistance in single layer poly(3-hexyl-thiophene) organic semiconductor device |
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| Affiliation: | 1. Materials Research Institute, School of Physics and Astronomy, Queen Mary University of London, Mile End Road, E1 4NS, London, United Kingdom;2. College of Physical Science and Technology, Sichuan University, Chengdu 610064, China;1. Department of Physics and Optoelectronics Convergence Research Center, Chonnam National University, Gwangju 500-757, Republic of Korea;2. Advanced Photonics Research Institute, GIST, Gwangju 500-712, Republic of Korea;1. Institute of Applied Synthetic Chemistry, Vienna University of Technology, Getreidemarkt 9/163, A-1060 Vienna, Austria;2. State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China;3. Institute of Chemical Technologies and Analytics, Vienna University of Technology, Getreidemarkt 9/164, A-1060 Vienna, Austria;4. Département de Chimie Physique, Université de Genève, 30, quai E. Ansermet, 1211 Geneva 4, Switzerland;1. Faculty of Electrical and Computer Engineering, University of Tabriz, Tabriz, Iran;2. Department of Electrical Engineering, Science and Research Branch, Islamic Azad University, Tehran, Iran;3. Department of Electrical Engineering, Imam Khomeini International University, Qazvin, Iran |
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| Abstract: | We compare the current density–voltage (J–V) and magnetoconductance (MC) response of a poly(3-hexyl-thiophene) (P3HT) device (Au/P3HT(350 nm)/Al) before and after annealing above the glass transition temperature of 150 °C under vacuum. There is a decrease of more than 3 orders of magnitude in current density due to an increase of the charge injection barriers after de-doping through annealing. An increase, approaching 1 order of magnitude, in the negative MC response after annealing can be explained by a shift in the Fermi level due to de-doping, according to the bipolaron mechanism. We successfully tune the charge injection barrier through re-doping by photo-oxidation. This leads to the charge injection and transport transitioning from unipolar to ambipolar, as the bias increases, and we model the MC response using a combination of bipolaron and triplet-polaron interaction mechanisms. |
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| Keywords: | Poly(3-hexyl-thiophene) P3HT Magnetoresistance Magnetoconductance Annealing Doping |
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