Impact of temperature on the efficiency of organic light emitting diodes |
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| Affiliation: | 1. Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Str. 1, 01062 Dresden, Germany;2. Fraunhofer-Institut für Photonische Mikrosysteme, Maria-Reiche-Str. 2, 01109 Dresden, Germany;1. Institute of Polymer Optoelectronic Materials and Devices, and State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China;2. Sinopec Shanghai Research Institute of Petrochemical Technology, Shanghai, 201208, China;3. South China Institute of Collaborative Innovation, Dongguan, 523808, China;1. Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China;2. Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China;1. InnovationLab GmbH, Speyerer Straße 4, 69115, Heidelberg, Germany;2. Technische Universität Darmstadt, Materials Science Department, Surface Science Division, Jovanka-Bontschits-Straße 2, 64287, Darmstadt, Germany;3. Merck KGaA, Frankfurter Straße 250, 64293, Darmstadt, Germany;1. Zurich University of Applied Sciences ZHAW, Institute of Computational Physics, Technikumstrasse 9, 8401, Winterthur, Switzerland;2. Institut des Matériaux, Ecole Polytechnique Fédérale de Lausanne, EPFL, Station 12, 1015, Lausanne, Switzerland;3. FLUXIM AG, Technoparkstrasse 2, 8406, Winterthur, Switzerland |
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| Abstract: | Organic light emitting devices (OLEDs) are known to heat up when driven at high brightness levels required for lighting and bright display applications. This so called Joule heating can in the extreme case lead to a catastrophic failure (breakdown) of the device. In this work, we compare the effect of Joule heated and externally heated OLEDs by their electrical and optical response. A reduction in resistance is observed at elevated temperatures, both, for Joule heating, and for externally heated samples driven at low current density. In both cases, we attribute the change in resistance to a higher mobility of charge carriers at the elevated temperatures. Additionally, we observe a quenching of the emission efficiency in heated single layers as well as in OLEDs, treated with an external heat source as well as on Joule heated samples. |
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| Keywords: | OLED Temperature Efficiency |
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