Thermal stability of organic transistors with short channel length on ultrathin foils |
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| Affiliation: | 1. Electrical and Electronic Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan;2. Exploratory Research for Advanced Technology (ERATO), Japan Science and Technology Agency (JST), 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-0032, Japan;3. The Institute of Scientific and Industrial Research (ISIR), Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan;1. Université de Pau et des Pays de l’Adour, IPREM (ECP, CNRS-UMR 5254), 2 Avenue Président Angot, 64053 Pau Cedex 09, France;2. Université de Pau et des Pays de l’Adour, IPREM (EPCP, CNRS-UMR 5254), 2 Avenue Président Angot, 64053 Pau Cedex 09, France;3. Université de Pau et des Pays de l’Adour, IPRA (CNRS-UMR 5142), Avenue de l’Université, BP 1155, 64013 Pau Cedex, France;4. CNRS, Institut de Chimie de Clermont – Ferrand (EP, ICCF, CNRS-UMR 6296), BP 80026, 63171 Aubière, France;5. CNRS, IPREM (EPCP, CNRS-UMR 5254), Hélioparc, 2 Avenue Président Angot, 64053 Pau Cedex 09, France;1. School of Physics and Microelectronic and Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan University, Changsha 410082, China;2. Department of Electrical and Information Engineering, Hunan Institute of Engineering, Xiangtan 411101, China;1. Nanoscience Center, Department of Physics, University of Jyväskylä, P.O. Box 35, FI40014 Jyväskylä, Finland;2. Saha Institute of Nuclear Physics, 1/AF, Bidhannagar, Kolkata 700064, India |
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| Abstract: | We demonstrate an effective design for fabrication of short channel organic transistors (<3 μm channel length) on ultrathin 1 μm thick substrates that exhibit excellent thermal stability. For short channel transistors, we demonstrate durability up to 170 °C, with a theoretical cutoff frequency above 100 kHz, and stable performance in cyclic heating tests up to 120 °C. We fabricate inverter circuits to investigate their behavior upon heating and show that inverter gain can be improved by 150%. Device performance and topology changes were systematically analyzed after annealing steps to gain better understanding on the mechanism behind the performance change. This report on the thermal stability of short channel transistors on ultrathin films shows good durability at elevated temperatures and paves the way for high frequency imperceptible electronics. |
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| Keywords: | Organic thin film transistors Thermal stability High frequency Ultrathin Parylene |
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