首页 | 本学科首页   官方微博 | 高级检索  
     


High-speed organic transistors with three-dimensional organic channels and organic rectifiers based on them operating above 20 MHz
Affiliation:1. Technology Research Institute of Osaka, 2-7-1 Ayumino, Izumi, Osaka 594-1157, Japan;2. The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan;1. Department of Advanced Materials Science, Graduate School of Frontier Science, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan;2. Electroplating Engineers of Japan Ltd., 5-50 Shinmachi, Hiratsuka, Kanagawa 254-0076, Japan;3. Toppan Forms Co., Ltd., 1-7-3 Higashi Shimbashi, Minato-ku, Tokyo 105-8311, Japan;4. Asahi Glass Co., Ltd., 1-5-1 Marunouchi, Chiyoda-ku, Tokyo 100-8405, Japan;5. Technology Research Institute of Osaka, 2-7-1 Ayumino, Izumi, Osaka 594-1157, Japan;1. Department of Electronic Engineering, National Engineering Lab for TFT-LCD Key Materials and Technologies, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, China;2. Department of Chemical Engineering, Stanford University, 381 North-South Mall, Stanford, CA 94305, USA;3. Corning Incorporated, SP-FR-06-1, Corning, NY 14831, USA;1. Algoritmi Research Center, University of Minho, 4800-058, Guimarães, Portugal;2. Department/Center of Physics, University of Minho, 4710 - 057, Braga, Portugal;3. Digital Printing and Imaging Technology, Technische Universität Chemnitz, 09107, Chemnitz, Germany;4. Fraunhofer ENAS, Department Printed Functionalities, 09126, Chemnitz, Germany;5. BCMaterials, Parque Científico y Tecnológico de Bizkaia, 48160, Derio, Spain;6. IKERBASQUE, Basque Foundation for Science, 48013, Bilbao, Spain;1. Department of Optics and Photonics, National Central University, Zhongli 320, Taiwan;2. National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan;3. Department of Chemistry, National Tsing-Hua University, Hsinchu 300, Taiwan;1. School of Electronic Engineering, Bangor University, Bangor, LL57 1UT, UK;2. Department of Materials, University of Oxford, Oxford, OX1 3PH, UK;3. Department of Chemistry, University of Manchester, Manchester, M13 9PL, UK;1. Dept. of Polytronics and Multifunctional Systems PMS, Fraunhofer EMFT, Hansastr. 27d, 80686 Munich, Germany;2. Chair for Polytronic Microsystems, Technische Universität Berlin, Gustav-Meyer-Allee 25, 13355 Berlin, Germany;3. Dept. of Appl. Sc. & Mechatronics, Munich University of Applied Sciences, Lothstr. 34, 80335 Munich, Germany
Abstract:Three-dimensional organic transistors (3D-OFETs) comprising vertical short channels are developed to raise the operational speed of organic transistors. The devices with a short-channel length of 0.8 μm and reduced parasitic capacitance operate at up to 20 MHz with an applied drain voltage of ?15 V. Organic rectifiers based on the diode-connected 3D-OFETs are also demonstrated to operate at above 20 MHz, even with an applied effective voltage of about 4 V, which is higher than the speed of radio frequency identification tags of 13.56 MHz required in near field communication. These techniques boost the performance of organic transistors and can help to realize the breakthrough for practical applications of organic logic circuits used as key components in various flexible or plastic devices.
Keywords:Organic transistor  High speed  Organic semiconductor  Rectifier
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号