InP/InGaAsP double-heterostructure optoelectronic switch |
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| Authors: | Kovacic SJ Robinson BJ Simmons JG Thompson DA |
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| Affiliation: | Dept. of Eng. Phys., McMaster Univ., Hamilton, Ont.; |
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| Abstract: | The double-heterostructure optoelectronic switch (DOES), fabricated in the InP/InGaAsP material system, is demonstrated. The functional characteristics and operational parameters exhibit a lower switching voltage (≈1.8 V) and a higher on-state holding current (≈20 mA) than found in either the Si/SiGe- or GaAs/AlGaAs-based DOES of comparable structures and doping levels. In the on-state, optical emission is observed in a manner analogous to a light emitting diode. However, enhanced optical emission is observed when the device is biased in the regime of negative differential resistance |
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