不同偏置下全耗尽SOI NMOSFET总剂量抗辐射的研究

研究了不同偏置条件下,全耗尽SOI NMOSFET的总剂量抗辐射特性,主要讨论不同偏置条件对器件中陷获电荷的产生和分布,以及由此对器件性能产生的影响.通过器件模拟发现,在辐射过程中器件的偏置条件不同,造成器件的有源区和埋氧层中电场的分布有着很大的差异.而俘获电荷的产生与电场又有着紧密的联系,所以造成了俘获电荷的分布和密度有很大的不同,从而对器件的影响也不同.模拟结果表明,在三种不同的偏置条件下,OFF态（关态）时背沟道附近陷获电荷密度最高,以常数电流法估算出的阈值电压负漂移最大,同时引起了最大的本底静态漏电流.

Total Dose Irradiation of FD SOI NMOSFET UnderDifferent Bias Configurations

The total dose irradiation effects under different bias configurations for fully-depleted (FD) silicon on insulator (SOI) devices are investigated,especially the influence on device performance from radiation-induced trapped-charges.The simulation results show that distribution of the electrical field is strongly dependent on the bias configuration.Moreover,the generation of trapped-charges is related to the electrical field.The variation of the electrical field distribution leads to the variation of trapped-charge distribution,which in turn results in the variation of device performance.Among the three different bias configurations,the OFF state has the highest density of trapped-charges and corresponds to the largest drift of threshold-voltage and leakage current of the front-gate transistor.