| 超突变结变突二级管的杂质浓度分布及n值 |
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| 引用本文： | 翁寿松 毛立平. 超突变结变突二级管的杂质浓度分布及n值[J]. 半导体技术, 2000, 25(1): 31-32,38 |
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| 作者姓名： | 翁寿松 毛立平 |
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| 作者单位： | 无锡市无线电元件四厂!无锡214061 |
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| 摘 要： | 讨论了国产和进口超突变结构容二极要质浓度分布和ｎ值，提出了提高国产超突变结变容二极管性能的措施。
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| 关 键 词： | 超突变结 变容二极管 杂质 浓度分布 n值 |
| 文章编号： | 1003-353X(2000)1-31-02 |
Distribution of Impurity Concentration and n Value for Hyperabrupt Varactor |
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| Weng Shousong,Mao Liping. Distribution of Impurity Concentration and n Value for Hyperabrupt Varactor[J]. Semiconductor Technology, 2000, 25(1): 31-32,38 |
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| Authors: | Weng Shousong Mao Liping |
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| Abstract: | The distribution of impurity concentration and n value for homemade and impor ted hyperabrupt varactors are discussed.Measures to improve the characteristics of homemade hyperabrupt varactors are given. |
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| Keywords: | Hyperabrupt Varactor Distribution of impurity concentration n value |
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