Physical/chemical properties of tin oxide thin film transistors prepared using plasma-enhanced atomic layer deposition |
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| Authors: | Byung Kook Lee Eunae Jung Seok Hwan Kim Dae Chul Moon Sun Sook Lee Bo Keun Park Jin Ha Hwang Taek-Mo Chung Chang Gyoun Kim Ki-Seok An |
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| Affiliation: | 1. Department of Advanced Materials and Technologies, Faculty of Advanced Technologies and Chemistry, Military University of Technology, Str. Kaliskiego 2, 00-908 Warszawa, Poland;2. VTT Technical Research Centre of Finland, Biologinkuja 5, Espoo, P.O. Box 1000, FI-02044, VTT, Espoo, Finland;3. Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02668 Warsaw, Poland;4. International Research Centre MagTop, Aleja Lotnikow 32/46, PL-02668 Warsaw, Poland;5. Institute of Optoelectronics, Military University of Technology, Str. Kaliskiego 2, 00-908 Warszawa, Poland |
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| Abstract: | Thin film transistors (TFTs) with tin oxide films as the channel layer were fabricated by means of plasma enhanced atomic layer deposition (PE-ALD). The as-deposited tin oxide films show n-type conductivity and a nano-crystalline structure of SnO2. Notwithstanding the relatively low deposition temperatures of 70, 100, and 130 °C, the bottom gate tin oxide TFTs show an on/off drain current ratio of 106 while the device mobility values were increased from 2.31 cm2/V s to 6.24 cm2/V s upon increasing the deposition temperature of the tin oxide films. |
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