Nanodomain formation and distribution in Gd-doped ceria |
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Authors: | Zhi-Peng Li Toshiyuki Mori Graeme John Auchterlonie Jin Zou John Drennan |
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Affiliation: | 1. DCCI, Department of Chemistry and Industrial Chemistry, University of Genova, Via Dodecaneso 31, 16146 Genova, Italy;2. CNR-ICMATE, Via De Marini 6, 16149 Genova, Italy;3. Elettra - Sincrotrone Trieste S.C.p.A., ss 14, km 163.5, 34149 Basovizza, Trieste, Italy;4. CNR-SPIN Genova, Corso Perrone 24, 16152 Genova, Italy;1. Department of Physics, The University of Burdwan, Burdwan 713104, India;2. Department of Physics, Indian Institute of Technology, Kharagpur 721302, India |
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Abstract: | A comprehensive study, with a combination of diverse analytical techniques, was performed to investigate nanodomain formation and distribution in gadolinium-doped ceria. It is illustrated that the nanodomain formation, originating from the aggregation and segregation of dopant cations together with associated charge-compensating oxygen vacancies, is ubiquitous throughout doped ceria. The formation of nanodomains is not limited to bulk areas as previously reported but exists at grain boundaries as well. With enhanced ordering level, such nanodomains formed at grain boundaries will decrease the ionic conductivity as a result of hindered the mobility of oxygen vacancies in doped ceria. Particularly, the nanodomains formed at grain boundaries, with strong defect interactions due to enrichment of dopants and ordered oxygen vacancies, are suggested to be another possible reason for the grain-boundary resistance, other than the widely accepted space-charge layers. |
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