Catalyst and its diameter dependent growth kinetics of CVD grown GaN nanowires |
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| Authors: | Chandan Samanta D. Sathish Chander J. Ramkumar S. Dhamodaran |
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| Affiliation: | 1. Department of Physics, Indian Institute of Technology Kanpur, India;2. Department of Mechanical Engineering, Indian Institute of Technology Kanpur, India;1. National Key Laboratory of Photoelectric Technology and Functional Materials (Culture Base), National Photoelectric Technology and Functional Materials & Application International Cooperation Base, Institute of Photonics & Photon-Technology, Northwest University, Xi’an 710069, PR China;2. Key Laboratory of Synthetic and Natural Functional Molecule Chemistry (Ministry of Education), College of Chemistry & Materials Science, Northwest University, Xi’an 710069, PR China;1. State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, PR China;2. Graduate University of the Chinese Academy of Sciences, Beijing 100049, PR China;1. School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China;2. State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;3. Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;1. Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry of CAS, Urumqi 830011, China;2. Key Laboratory of Oil and Gas Fine Chemicals, Ministry of Education and Xinjiang Uyghur Autonomous Region, Xinjiang University, Urumqi 830046, China;3. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science, Suzhou 215123, China;1. Nanomaterials Group, Department of Materials Engineering, Tarbiat Modares University, P.O. Box 14115-143, Tehran, Iran;2. Faculty of Energy Engineering and New Technologies, Shahid Beheshti University, Tehran, Iran |
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| Abstract: | GaN nanowires were grown using chemical vapor deposition with controlled aspect ratio. The catalyst and catalyst-diameter dependent growth kinetics is investigated in detail. We first discuss gold catalyst diameter dependent growth kinetics and subsequently compare with nickel and palladium catalyst. For different diameters of gold catalyst there was hardly any variation in the length of the nanowires but for other catalysts with different diameter a strong length variation of the nanowires was observed. We calculated the critical diameter dependence on adatoms pressure inside the reactor and inside the catalytic particle. This gives an increasing trend in critical diameter as per the order gold, nickel and palladium for the current set of experimental conditions. Based on the critical diameter, with gold and nickel catalyst the nanowire growth was understood to be governed by limited surface diffusion of adatoms and by Gibbs–Thomson effect for the palladium catalyst. |
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