Modification of the optical properties of ZnO thin films by proton implantation |
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| Authors: | Yong Ju Ham Jun Kue Park W Lee Cheol Eui Lee W Park |
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| Affiliation: | 1. Department of Physics and Institute for Nano Science, Korea University, Seoul 136-713, Republic of Korea;2. Graduate School of Management of Technology, Korea University, Seoul 136-713, Republic of Korea;1. Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Kobe 657-8501, Japan;2. Centre for Support to Research and Education Activities, Kobe University, 1-1 Rokkodai, Kobe 657-8501, Japan;3. Molecular Photoscience Research Center and Graduate School of Science, Kobe University, 1-1 Rokkodai, Kobe 657-8501, Japan;1. Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science & Engineering, Tongji University, 4800 Caoan Road, Shanghai 201804, China;2. CSIRO Manufacturing, New Horizon Building, Clayton, VIC 3168, Australia;1. School of Materials Science and Engineering, Kyungpook National University, Deagu 41566, Republic of Korea;2. Research Institute of Advanced Energy Technology, Kyungpook National University, Daegu 41566, Republic of Korea;1. IMEC, Kapeldreef 75, B-3001 Heverlee (Leuven), Belgium;2. KU Leuven, Department of Physics and Astronomy (IKS), Celestijnenlaan200D, 3001 Leuven, Belgium;3. KU Leuven, Department of Physics and Astronomy (SPS), Celestijnenlaan200D, 3001 Leuven, Belgium;4. Universiteit Gent, Krijgslaan 281 (S1), 9000 Gent, Belgium |
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| Abstract: | Optical properties of proton-implanted ZnO thin film prepared by radio-frequency (rf) magneton sputtering have been studied, the optical constants being obtained from the reflectance measurements by employing Cauchy–Urbach model. Increase in the ordinary refractive index after proton implantation was explained by that in the polarizability. Besides, a slight increase in the optical band gap by proton implantation was identified and discussed in terms of the hydrogen shallow donors introduced by the proton implantation. |
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