Effects of hydrogen atmosphere on pulsed-DC sputtered nanocrystalline Si:H films |
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| Authors: | JS Cherng SH Chang SH Hong |
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| Affiliation: | 1. Department of Materials Engineering, Mingchi University of Technology, 84 Gungjuan Rd., Taishan, Taipei 24301, Taiwan;2. Center for Thin Film Technologies and Applications, Mingchi University of Technology, 84 Gungjuan Rd., Taishan, Taipei 24301, Taiwan;1. Departamento de Física Aplicada and Instituto de Investigaciones Energéticas y Aplicaciones Industriales, Escuela Técnica Superior de Ingenieros Industriales, Universidad de Castilla-La Mancha, 13071-Ciudad Real, Spain;2. Grupo de Materiales Magnéticos y Nanoestructuras, Programa de Física, Universidad del Quindío, Armenia, Colombia;1. Department of Physics, Faculty of Science, University of Taif, Al Taif, Saudi Arabia;2. Department of Physics, Faculty of Science, University of Aswan, Aswan, Egypt;3. Department of Physics, Faculty of Science, University of Assuit, Assuit, Egypt;4. Department of Chemistry, Faculty of Science, University of Taif, Al Taif, Saudi Arabia;5. Department of Chemistry, Faculty of Science, University of Aswan, Aswan, Egypt;1. School of Marine Sciences, Nanjing University of Information Sciences and Technology, Nanjing 210044, China;2. Institute of Oceanology, Chinese Academy of Sciences, Qingdao 266071, China;3. University of Chinese Academy of Sciences, Beijing 100049, China;1. College of Global Change and Earth System Science, Beijing Normal University, Beijing 100875, China;2. International Institute for Earth System Science, Nanjing University, Nanjing 210023, China;3. Department of Geography and Program in Planning, University of Toronto, Toronto, Ontario M5S 2E8, Canada;4. Key Laboratory of Tibetan Environment Changes and Land Surface Processes, Institute of Tibetan Plateau Research, Chinese Academy of Sciences, Beijing 100101, China |
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| Abstract: | Hydrogenated nanocrystalline silicon (nc-Si:H) films were prepared by a pulsed-DC magnetron sputtering method under an atmosphere of hydrogen/argon mixture. The effects of hydrogen concentration on the structural and electrical properties of the films were systematically investigated using grazing incidence X-ray diffraction (GIXRD), Raman spectroscopy, and conductivity measurement. A threshold hydrogen concentration of about 70% was found necessary before any crystallinity was detectable. The deposition rate decreased monotonically with increasing hydrogen concentration, while the conductivity varied with crystallite size. The abnormally low conductivity level of these nc-Si:H films was due to the extraordinarily high defect density, which was attributed both to the enhanced ion bombardment from the pulsed-DC plasma and to the oxygen contamination from the target. |
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