Electrical properties of niobium doped barium bismuth-titanate ceramics |
| |
Authors: | J.D. Bobić M.M. Vijatović Petrović J. Banys B.D. Stojanović |
| |
Affiliation: | 1. School of Materials Science and Engineering, Guangxi University, Nanning 530004, Guangxi, PR China;2. Guangxi Key Laboratory of Processing for Non-ferrous Metal and Featured Materials, Nanning 530004, Guangxi, PR China |
| |
Abstract: | BaBi4Ti4–5/4xNbxO15 (BBNTx, x = 0, 0.05, 0.15, 0.30) ceramics have been prepared by solid state method. XRD data indicate the formation of single-phase-layered perovskites for all compositions. SEM micrographs suggest that the grain size decreases with Nb doping. The effect of niobium doping on the dielectric and relaxor behavior of BaBi4Ti4O15 ceramics was investigated in a wide range of temperatures (20–777 °C) and frequencies (1.21 kHz to 1 MHz). Nb doping influences Tc decrease as well as the decrease of dielectric permittivity at Curie temperature. At room temperature, undoped BaBi4Ti4O15 exhibits dielectric constant of ~204 at 100 kHz, that slightly increases with Nb doping. The conductivity of BBNT5 ceramics is found to be lower than that of other investigated compositions. The value of activation energy of σDC was found to be 0.89 eV, 1.01 eV, 0.93 eV and 0.71 eV for BBT, BBNT5, BBNT15 and BBNT30, respectively. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |
|