Optical and electronic properties of highly stable and textured hydrogenated ZnO:Al thin films |
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Authors: | Younghun Hwang Hyungmin Kim Youngho Um Hyoyeol Park |
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Affiliation: | 1. Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory, Rue de la Maladière 71B, Neuchâtel CH-2000, Switzerland;2. Ecole Polytechnique Fédérale de Lausanne (EPFL), Interdisciplinary Centre for Electron Microscopy (CIME), Station 12, Lausanne CH-1015, Switzerland;3. Centre Suisse d''Electronique et Microtechnique (CSEM), PV-center, Rue Jacques-Droz 1, Neuchâtel CH-2002, Switzerland |
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Abstract: | We have experimentally investigated the effects of hydrogen-annealing on the structural, electrical, and optical properties of Al-doped ZnO (ZnO:Al) thin films prepared by RF magnetron sputtering at room temperature. From the X-ray diffraction observations, the orientation of ZnO:Al films was found to be a c-axis in the hexagonal structure. We found that intentionally incorporated hydrogen plays an important role in n-type conduction as a donor, improving free carrier concentration and electrical stability. We simultaneously obtained improved optical transmission and enhanced absorption edge of the ZnO:Al film due to hydrogen-annealing. Our experimental data suggest the hydrogen-annealing process as an important role in the enhancement of electrical and optical properties, which is promising as a back reflector material for thin-film solar cells. |
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