Nanoscale size dependence parameters on lattice thermal conductivity of Wurtzite GaN nanowires |
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| Authors: | SM Mamand MS Omar AJ Muhammad |
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| Affiliation: | 1. Department of Physics, College of Science, University of Sulaimani, Sulaimanyah, Iraqi Kurdistan, Iraq;2. Department of Physics, College of Science, University of Salahaddin, Arbil, Iraqi Kurdistan, Iraq;3. Department of Physics, College of Science, University of Kirkuk, Kirkuk, Iraq;1. Department of Anatomy and Cell Biology, Institute of Health Biosciences, The University of Tokushima Graduate School, 3-18-15 Kuramoto, Tokushima 770-8503, Japan;2. Division of Nanomaterials Science, EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan;1. Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China;2. University of Chinese Academy of Sciences, 19 A Yuquan Road, Shijingshan District, Beijing, 100049, China;3. Center for Advanced Structural Materials, Department of Mechanical and Biomedical Engineering, College of Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong, China;4. Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China;1. Centre for High Energy Physics, University of the Punjab, Quaid-e-Azam Campus, 54590, Lahore, Pakistan;2. Materials Growth and Simulation laboratory, Department of Physics, University of the Punjab, Quaid-e-Azam Campus, 54590 Lahore, Pakistan;3. Department of Physics, COMSATS Institute of Information Technology, 44000 Islamabad, Pakistan;4. Department of Physics, Government College University Faisalabad, 38000 Faisalabad, Pakistan;5. Department of Physics and Astronomy, College of Science, King Saud University, Riyadh, 11451 Saudi Arabia;1. College of Materials Science and Engineering, Chongqing University, Chongqing, 400030, China;2. School of Electronic and Electrical Engineering, Chongqing University of Arts and Sciences, Chongqing 400030, China;1. Department of Quantum Technologies, Wroclaw University of Science and Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland;2. Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, PL-02668 Warsaw, Poland |
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| Abstract: | A detailed calculation of lattice thermal conductivity of freestanding Wurtzite GaN nanowires with diameter ranging from 97 to 160 nm in the temperature range 2–300 K, was performed using a modified Callaway model. Both longitudinal and transverse modes are taken into account explicitly in the model. A method is used to calculate the Debye and phonon group velocities for different nanowire diameters from their related melting points. Effect of Gruneisen parameter, surface roughness, and dislocations as structure dependent parameters are successfully used to correlate the calculated values of lattice thermal conductivity to that of the experimentally measured curves. It was observed that Gruneisen parameter will decrease with decreasing nanowire diameters. Scattering of phonons is assumed to be by nanowire boundaries, imperfections, dislocations, electrons, and other phonons via both normal and Umklapp processes. Phonon confinement and size effects as well as the role of dislocation in limiting thermal conductivity are investigated. At high temperatures and for dislocation densities greater than 1014 m?2 the lattice thermal conductivity would be limited by dislocation density, but for dislocation densities less than 1014 m?2, lattice thermal conductivity would be independent of that. |
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