Oxygen plasma power dependence on ZnO grown on porous silicon substrates by plasma-assisted molecular beam epitaxy |
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| Authors: | Giwoong Nam Min Su Kim Do Yeob Kim Kwang Gug Yim Soaram Kim Sung-O. Kim Dong-Yul Lee Jae-Young Leem |
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| Affiliation: | 1. Department of Nano Engineering, Inje University, Gimhae, Gyungnam 621-749, Republic of Korea;2. Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae, Gyungnam 621-749, Republic of Korea;3. Holcombe Department of Electrical and Computer Engineering, Center for Optical Materials Science and Engineering Technologies, Clemson University, Clemson, SC 29634, USA;4. Epi R&D Team, Samsung LED Co. Ltd., Suwon, Gyeonggi-do 443-373, Republic of Korea;1. Key Laboratory of Specially Functional Materials, Ministry of Education, South China University of Technology, Guangzhou 510640, China;2. College of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China;3. Xinyi Glass Holdings Limited, Dongguan City, Guangdong Province 523935, China;1. Department of Chemistry, Furman University, Greenville, SC 29613, United States;2. Department of Chemistry, Clemson University, Clemson, SC 29634, United States;1. Mediciones y Corrosión S. L., Avda. Vicente Sos Baynat s/n, 12006 Castellón, Spain;2. PIMA Research Group, Universitat Jaume I, Avda. Vicent Sos Baynat s/n, 12071 Castellón, Spain |
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| Abstract: | ZnO thin films were deposited on porous silicon by plasma-assisted molecular beam epitaxy using different radio frequency power settings. Optical emission spectrometry was applied to study the characteristics of the oxygen plasma, and the effects of the radio frequency power on the properties of the ZnO thin films were evaluated by X-ray diffraction, scanning electron microscopy, and photoluminescence. The grain sizes for radio frequency powers of 100, 200, and 300 W were 46, 48, and 62 nm, respectively. In addition, the photoluminescence intensities of the ultraviolet and the visible range increased at 300 W, because the density of the atomic oxygen transitions increased. The quality of the ZnO thin films was enhanced, but the deep-level emission peaks increased with increasing radio frequency power. The structural and optical properties of the ZnO thin films were improved at the radio frequency power of 300 W. Moreover, the optical properties of the ZnO thin films were improved with porous silicon, instead of Si. |
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