The thermally induced limitations of SiC SBDs operation conditions |
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Authors: | WŁodzimierz Janke Aneta Hapka |
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Affiliation: | Department of Electronics and Computer Science, Koszalin University of Technology, J.J. ?niadeckich 2, Koszalin, Postal Code 75-453, Poland |
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Abstract: | In the paper, the DC current–voltage characteristics of silicon carbide Schottky barrier diodes are analyzed, with special attention paid to the critical current and junction temperature estimation. The self-heating phenomenon, interpreted as an electro-thermal positive feedback, is taken into account. The measurements of isothermal and non-isothermal I–V characteristics, as well as adequate calculations, are shown and discussed. The electro-thermal models, based on various descriptions of temperature-dependent series resistance of the device, are proposed. It is also shown that the shapes of I–V characteristics depend on the current range and on the heat-sink size. |
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