TiO2 nanotube-based field effect transistors and their application as humidity sensors |
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| Authors: | Fengxia Liang Lin-Bao Luo Chun-Kwan Tsang Lingxia Zheng Hua Cheng Yang Yang Li |
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| Affiliation: | 1. Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong Special Administrative Region;2. School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, Anhui, PR China;1. Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kerala 682022, India;2. Inter University Center for Nanomaterials and Devices (IUCND), Cochin University of Science and Technology, Kerala 682022, India;3. Center for Advanced Materials, Cochin University of Science and Technology, Kerala 682022, India;1. School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing 100044, China;2. Institute of Microelectronics, Tsinghua University, Beijing 100084, China |
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| Abstract: | TiO2 nanotubes are the building units of various devices of energy- and environment-related applications and the property studies of individual TiO2 nanotubes are important to understand and improve the performance of TiO2 nanotubes-based devices. Here we report the electrical property study of individual TiO2 nanotubes enabled by the construction of field effect transistors based on individual TiO2 nanotubes. It is found that individual TiO2 nanotubes exhibit typical n-type electrical conduction characteristics, with electron mobility of 6.9 × 10?3 cm2/V s at Vds = 1 V, and electron concentration of 2.8 × 1017 cm?3. Moreover, the on–off ratio of the TiO2 nanotube-based field effect transistors is as high as 103. Humidity sensing test shows the sensitive response of the individual TiO2 nanotubes to water vapor. |
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