Low temperature CuCu thermo-compression bonding with temporary passivation of self-assembled monolayer and its bond strength enhancement |
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| Authors: | CS Tan DF Lim XF Ang J Wei KC Leong |
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| Affiliation: | 1. Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore;2. CINTRA CNRS/NTU/THALES, UMI 3288, 50 Nanyang Drive, Singapore 637553, Singapore;3. Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, Singapore 638075, Singapore;4. GlobalFoundries Singapore, 60 Woodlands Industrial Park Street 2, Singapore 738406, Singapore |
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| Abstract: | Self-assembled monolayer (SAM) of alkane-thiol is formed on copper (Cu) thin layer coated on silicon (Si) wafer with the aim to protect the surface against excessive oxidation during storage in the room ambient. After 3 days of storage, the temporary SAM layer is desorbed with in situ anneal in inert ambient to uncover the clean Cu surface. A pair of wafers is bonded at 250 °C. Clear evidences of in-plane and out-of-plane Cu grain growth are observed resulting in a wiggling bonding interface. This gives rise to enhancement in shear strength in the bonded Cu Cu layer. |
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