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High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs |
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| Authors: | V. Kilchytska J. Alvarado S. Put N. Collaert E. Simoen C. Claeys O. Militaru G. Berger D. Flandre |
| Affiliation: | 1. ICTEAM Institute, Université Catholique de Louvain (UCL), Place du Levant 3, 1348 Louvain-la-Neuve, Belgium;2. Imec, Kapeldreef 75, 3001 Leuven, Belgium;3. Centre de Recherches du Cyclotron (CRC), Université Catholique de Louvain, 1348 Louvain-la-Neuve, Belgium |
| Abstract: | A comparative investigation of high-energy neutrons effect on strained and non-strained devices with different geometries is presented. Both single-gate planar and multiple-gate (MuG) silicon-on-insulator (SOI) devices are considered. Device response to the neutron irradiation is assessed through the variations of threshold voltage and transconductance maximum. The difference between strained and non-strained device response to the high-energy neutrons exposure is clearly evidenced. The reasons for such a difference are discussed. Analysis of the experimental results allows for suggesting that strain relaxation is one of the probable causes. |
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