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Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (1 1 1) by plasma-assisted MBE
Authors:Mahesh Kumar  Thirumaleshwara N. Bhat  Basanta Roul  Mohana K. Rajpalke  A.T. Kalghatgi  S.B. Krupanidhi
Affiliation:1. Materials Research Centre, Indian Institute of Science, Bangalore 560 012, India;2. Central Research Laboratory, Bharat Electronics, Bangalore 560 013, India;1. LPS, Faculty of Sciences, Dhar El Mehrez, B.P 1796 Atlas Fes, Morocco;2. Specials Mathematics, CPGE Kénitra, Chakib Arsalane Street, Morocco;1. Institute of Microelectronics and Key Laboratory for Magnetism and Magnetic Materials of MOE, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, Gansu, People''s Republic of China;2. State Key Discipline Laboratory of Wide Bandgap Semiconductor Technologies, School of Microelectronics, Xidian University, Xi’an 710071, People''s Republic of China;3. Electronic Information School, Wuhan University, Wuhan 430072, People''s Republic of China;1. School of Electrical Engineering, University of Belgrade, Bulevar kralja Aleksandra 73, 11120 Belgrade, Serbia;2. P* Group, Vin?a Institute of Nuclear Sciences, University of Belgrade, P.O.B. 522, Belgrade, Serbia;1. Institute of High Pressure Physics Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland;2. Insititute of Physics Polish Academy of Sciences, Aleja Lotnikow 32/46, 02-668 Warsaw, Poland;3. Department of Applied Chemistry, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan;4. Center for Integrated Research of Future Electronics, Institute of Materials and Systems for Sustainability, Nagoya University, C3-1 Furo-cho, Chikusa-su, Nagoya 464-8603, Japan
Abstract:The n-type GaN layers were grown by plasma-assisted MBE and either intentionally doped with Si or unintentionally doped. The optical characteristics of a donor level in Si-doped, GaN were studied in terms of photoluminescence (PL) spectroscopy as a function of electron concentration. Temperature dependent PL measurements allowed us to estimate the activation energy of a Si-related donor from temperature-induced decay of PL intensity. PL peak positions, full width at half maximum of PL and activation energies are found to be proportional to the cube root of carrier density. The involvement of donor levels is supported by the temperature-dependent electron concentration measurements.
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