Growth of horizontally aligned dense carbon nanotubes from trench sidewalls |
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Authors: | Lu Jingyu Miao Jianmin Xu Ting Yan Bin Yu Ting Shen Zexiang |
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Affiliation: | School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore. |
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Abstract: | Horizontally aligned, dense carbon nanotubes (HADCNTs) in the form of CNT cantilevers/bridges were grown from selected trench sidewalls in silicon substrate by chemical vapor deposition (CVD). The as-grown CNT cantilevers/bridges are packed with multiwalled carbon nanotubes (MWCNTs) with a linear density of about 10 CNTs μm(-1). The excellent horizontal alignment of these CNTs is mainly ascribed to the van der Waals interactions within the dense CNT bundles. What is more, the Raman intensity ratio I(G)/I(D) shows a gradual increase from the CNT roots to tips, indicating a defect gradient along CNTs generated during their growth. These results will inspire further efforts to explore the fundamentals and applications of HADCNTs. |
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