Imaging conduction pathways in carbon nanotube network transistors by voltage-contrast scanning electron microscopy |
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Authors: | Vijayaraghavan Aravind Timmermans Marina Y Grigoras Kestutis Nasibulin Albert G Kauppinen Esko I Krupke Ralph |
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Affiliation: | School of Computer Science, The University of Manchester, Manchester, UK. aravind@cs.man.ac.uk |
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Abstract: | The performance of field-effect transistors based on single-walled carbon nanotube (SWCNT) networks depends on the electrical percolation of semiconducting and metallic nanotube pathways within the network. We present voltage-contrast scanning electron microscopy (VC-SEM) as a new tool for imaging percolation in a SWCNT network with nano-scale resolution. Under external bias, the secondary-electron contrast of SWCNTs depends on their conductivity, and therefore it is possible to image the preferred conduction pathways within a network by following the contrast evolution under bias in a scanning electron microscope. The experimental VC-SEM results are correlated to percolation models of SWCNT-bundle networks. |
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